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Title: VARIOT: A novel multilayer tunnel barrier concept, for low-voltage nonvolatile memory devices
Authors: Govoreanu, B
Blomme, Pieter
Rosmeulen, M
Van Houdt, J
De Meyer, Christina #
Issue Date: Feb-2003
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Electron Device Letters vol:24 issue:2 pages:99-101
Abstract: Low-voltage low-power nonvolatile floating-gate memory device operation can be achieved by using alternative tunnel barriers consisting of at least two dielectric layers with different dielectric constants kappa. Low-kappa/high-kappa (asymmetric) and low-kappa/high-kappa/low-kappa (symmetric) barriers enable steeper tunneling current-voltage characteristics. Their implementation is possible with high-kappa dielectric materials that are currently investigated for SiO2 replacement in sub-100-nm CMOS technologies. We show that a reduction in programming voltages of up to 50% can be achieved. This would significantly reduce the circuitry required to generate the high voltages on a nonvolatile memory chip, while maintaining sufficient performance and reliability.
URI: 
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
# (joint) last author

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