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Title: Write/erase cycling endurance of memory cells with SiO2/HfO2 tunnel dielectric
Authors: Blomme, Pieter
Van Houdt, J
De Meyer, Christina #
Issue Date: Sep-2004
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on device and materials reliability vol:4 issue:3 pages:345-352
Abstract: The write/erase cycling endurance of low voltage floating-gate memory cells programmed and erased by tunneling through a SiO2/HfO2 dual layer tunnel dielectric stack is investigated. The use of fixed single pulse program and erase conditions leads to fast shifting (after similar to1000 cycles) of the threshold voltage window, so that only a limited number of write/erase cycles can be achieved. Increasing the write and erase duration quickly leads to an excessive erase time so that a different erase method has to be used.
ISSN: 1530-4388
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
# (joint) last author

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