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Title: On the calculation of the quasi-bound-state energies and lifetimes in inverted MOS structures with ultrathin oxides and its application to the direct tunneling current
Authors: Govoreanu, B
Magnus, W
Schoenmaker, W
Van Houdt, J
De Meyer, Christina #
Issue Date: May-2004
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on electron devices vol:51 issue:5 pages:764-773
Abstract: We discuss the inverted MOS structure with extremely thin oxides as a quasi-bound-state system. Its energy subbands can be regarded as resonances of a quantum mechanical system with a continuum of eigenstates. We derive an analytical calculation to extract the defining parameters of the Lorentzian peaks associated with the relative probability of localizing an electron in the confining potential region at the Si/dielectric interface and propose an algorithm that allows to estimate the energy levels and the lifetimes of these states, provided the solution of the approximate bound state system is known.
URI: 
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
# (joint) last author

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