Title: Write erase degradation and disturb effects in source-side injection flash eeprom devices
Authors: Wellekens, D ×
Vanhoudt, J
Groeseneken, Guido
Maes, He
Faraone, L #
Issue Date: Jul-1995
Publisher: John wiley & sons ltd
Series Title: Quality and reliability engineering international vol:11 issue:4 pages:239-246
Abstract: An in-depth analysis of the write/erase degradation of source-side injection flash EEPROM devices is performed, which reveals two mechanisms underlying this degradation: a decrease of the charge per cycle on the floating gate, accompanied by the series effect of oxide and interface charges locally trapped above the channel. In addition, the main disturb effects are characterized and shown to be non-critical for reliable cell operation.
ISSN: 0748-8017
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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