Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, ELECTRICAL-PROPERTIES, DIFFUSION, COBALT, CONTAMINATION, MANGANESE, COPPER, 0204 Condensed Matter Physics, 0205 Optical Physics, 0912 Materials Engineering, Applied Physics, 4016 Materials engineering, 5102 Atomic, molecular and optical physics, 5104 Condensed matter physics

Abstract:

© 2017, Springer-Verlag Berlin Heidelberg. We have studied the influence of electronic doping on the preferred lattice sites of implanted 61 Co , and the related stabilities against thermal annealing, in silicon. Using the β - emission channeling technique we have identified Co on ideal substitutional (ideal S) sites, sites displaced from bond-centered towards substitutional (near-BC) sites and sites displaced from tetrahedral interstitial towards anti-bonding (near-T) sites. We show clearly that the fractions of Co on these lattice sites change with doping. While near-BC sites prevail in n + -type Si, near-T sites are preferred in p + -type Si. Less than ∼ 35% of Co occupies ideal S sites in both types of heavily doped silicon, showing that the majority of implanted Co forms complex defect structures. Implantation-induced defects seem to getter more efficiently Co in lightly doped n-type than in heavily doped n + - or p + -type silicon. The formation of CoB pairs in p + -type silicon and its possible influence on the lattice sites is discussed.