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Title: MOVPE AlGaN/AlN/GaN HEMT with in-situ passivation
Authors: Germain, M ×
Ruythooren, W
Leys, M
Derluyn, J
Das, J
Xiao, Dongping
Wang, Wenfei
Vandersmissen, R
Degroote, S
Boeykens, S
Schreurs, Dominique
Borghs, Gustaaf #
Issue Date: Oct-2004
Host Document: European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) Workshop on "Wide Band-Gap Research for Microwave Applications: Materials, Device and Circuit Issues" pages:1-10
Conference: European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) Workshop on "Wide Band-Gap Research for Microwave Applications: Materials, Device and Circuit Issues" location:Amsterdam, The Netherlands date:13 October 2004
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Physics and Astronomy - miscellaneous
Electrical Engineering - miscellaneous
ESAT - ELECTA, Electrical Energy Computer Architectures
ESAT- TELEMIC, Telecommunications and Microwaves
× corresponding author
# (joint) last author

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