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Title: W-band high-gain amplifier using InP dual-gate HEMT technology
Authors: Van der Zanden, K ×
Baeyens, Y
Van Hove, M
Schreurs, Dominique
De Raedt, W
Van Rossum, Marc #
Issue Date: May-1997
Host Document: Indium Phosphide and Related Compounds Conference (IPRM) pages:249-252
Conference: Indium Phosphide and Related Compounds Conference (IPRM) location:Cape Cod, MA, USA date:12-15 May 1997
Publication status: published
KU Leuven publication type: IC
Appears in Collections:ESAT- TELEMIC, Telecommunications and Microwaves
Physics and Astronomy - miscellaneous
× corresponding author
# (joint) last author

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