ITEM METADATA RECORD
Title: Behavioural model for AlGaN/GaN HEMT on sapphire and SiC constructed from multi-bias large-signal measurements
Authors: Schreurs, Dominique ×
Vellas, N
Gaquière, C
Germain, M
Borghs, Gustaaf #
Issue Date: May-2003
Host Document: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) pages:43-44
Conference: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) location:Fueringen, Switzerland date:26-28 May 2003
Publication status: published
KU Leuven publication type: IC
Appears in Collections:ESAT- TELEMIC, Telecommunications and Microwaves
Physics and Astronomy - miscellaneous
× corresponding author
# (joint) last author

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