Author:

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Engineering, Science & Technology - Other Topics, Effective mobility, Split CV, Rotated substrate, Strain, FINFET STRUCTURES, DEVICES, PERFORMANCE, MOSFETS, SILICON

Abstract:

© 2016 IEEE. This paper studies the carrier mobility of triple gate SOI nFinFETs, fabricated on standard and rotated substrates, varying the fin width. The effective mobility results were extracted using the Split CV method, where FinFETs fabricated with rotated substrate show a higher maximum mobility than devices fabricated with a standard substrate. The effects of biaxial strain were also analyzed for the maximum mobility and it is shown that the strain increases the mobility for standard and rotated substrates. The mobility degradation was analyzed and compared for all devices. The results show that for standard devices the strain decreases the degradation of the mobility, whereas for the rotated devices strain results in an increase in this degradation for small fin width.