Title: Lattice sites and damage annealing of Er in low-dose implanted GaAs
Authors: Wahl, Ulrich ×
Vantomme, André
Langouche, Guido
ISOLDE Collaboration #
Issue Date: Jan-1999
Publisher: Elsevier science bv
Series Title: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms vol:148 issue:1-4 pages:492-496
Abstract: We have used conversion electron emission channeling to determine the lattice location of (167)mEr (t(1/2) = 2.28 s) in GaAs after 60 keV room temperature implantation of Tm-167 (t(1/2) = 9.25 d) at low doses (0.6-3 x 10(13) cm(-2)). Following a recovery step of the implantation damage at 200-300 degrees C, we observe a large fraction of Er (45-68%) on substitutional Ga sites. A second fraction of Er is found on the T-As sites (the tetrahedral interstitial sites with nearest As neighbours). The fraction on T-As sites reaches a maximum of 12-23% following annealing at 500 - 600 degrees C. At higher annealing temperatures the channeling effects decrease markedly, which we attribute to the well-known degradation of GaAs due to As evaporation. (C) 1999 Elsevier Science B.V. All rights reserved.
ISSN: 0168-583X
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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