Title: Formation of ultra-thin PtSi layers with a 2-step silicidation process
Authors: Donaton, RA ×
Jin, S
Bender, H
Zagrebnov, M
Baert, K
Maex, Karen
Vantomme, André
Langouche, Guido #
Issue Date: Nov-1997
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:37-8 issue:1-4 pages:507-514
Abstract: The use of a 2-step silicidation process to form ultra-thin layers of PtSi is shown. Continuous PtSi layers down to 3 nm thick are formed after sputter deposition of a thick Pt layer and subsequent RTP step followed by a selective etch and a second RTP step. A Pt/Pt2Si/PtSi layered structure is formed after the first RTP step. PtSi/p-Si diodes formed using this method showed an ideality factor close to unity and the barrier height was found to be 0.234 eV.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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