Title: Electron probe microanalysis of rare earth doped gallium nitride light emitters
Authors: Dalmasso, S ×
Martin, RW
Edwards, PR
O'Donnell, KP
Pipeleers, Bert
Vantomme, André
Nakanishi, Y
Wakahara, A
Yoshida, A
the RENiBE1 Network #
Issue Date: 2003
Publisher: Adam Hilger
Series Title: Institute of Physics Conference Series issue:180 pages:555-558
Abstract: Rare earth doped GaN structures offer potential for optical devices emitting in the visible spectral region. Doping with europium and erbium produces characteristic sharp red and green emission lines respectively, due to intra-4f(n) shell electron transitions. We describe studies of Eu- and Er- ion implanted MOCVD grown GaN epilayers on sapphire using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Wavelength dispersive X-ray analysis is shown to be an accurate technique for quantifying rare earth concentrations in GaN, down to similar to0.06 atomic % and is complemented by CL acquired at the same time from the same microscopic region of sample.
ISSN: 0951-3248
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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