Title: Lattice location and stability of ion implanted Cu in Si
Authors: Wahl, Ulrich ×
Vantomme, André
Langouche, Guido
Correia, JG
ISOLDE Collaboration #
Issue Date: Feb-2000
Publisher: American physical soc
Series Title: Physical Review Letters vol:84 issue:7 pages:1495-1498
Abstract: We report on the lattice location of ion implanted Cu in Si using the emission channeling technique. The angular distribution of beta(-) particles emitted by the radioactive isotope Cu-67 was monitored following room temperature implantation into Si single crystals and annealing up to 600 degrees C. The majority of Cu was found close to substitutional sites, however, with a significant displacement, most likely 0.50(8) Angstrom along the [111] directions towards the bond center position. The activation energy for the dissociation of near-substitutional Cu is estimated to be 1.8-2.2 eV.
ISSN: 0031-9007
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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