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Title: Exciton dynamics in gaas/algaas multiple quantum-wells investigated by picosecond reflectivity and luminescence measurements
Authors: Zhang, Hua
Goovaerts, E
Van Hoof, Chris
Schoemaker, D
Borghs, Gustaaf #
Issue Date: Jul-1992
Publisher: Elsevier science bv
Series Title: Journal of luminescence vol:53 issue:1-6 pages:431-434
Abstract: Picosecond time-resolved induced reflectivity measurements were performed in narrow well ( approximately 4.2 nm) GaAs/Al0.4Ga0.6As multiple quantum well systems in order to investigate fast excitonic relaxation. In a wide-barrier sample, - corresponding to independent subbands in each quantum well - a single exponential decay of the induced reflectivity is observed at very low power levels, corresponding to the population decay of the lowest exciton (hh1-e1). At higher excitation levels, a second, faster component appears, which is ascribed to exciton-exciton interactions. The amplitude of both components shows resonances at the energy of the lowest heavy and light hole exciton transitions. Comparison is made with induced transparency measurements on a back-etched specimen. In a thin barrier sample (L(B) almost-equal-to 4.2 nm) - in which the exciton states couple through the barriers - a short, energy dependent decay time is measured, for which correlation with the photoluminescence decay is not straightforward.
URI: 
ISSN: 0022-2313
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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