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Title: High-efficiency thin-film light-emitting diodes at 650 nm
Authors: Rooman, C
Windisch, R
D'Hondt, M
Dutta, B
Modak, P
Mijlemans, P
Borghs, Gustaaf
Vounckx, R
Moerman, I
Kuijk, M
Heremans, Paul #
Issue Date: Jun-2001
Publisher: Iee-inst elec eng
Series Title: Electronics Letters vol:37 issue:13 pages:852-853
Abstract: The first surface-textured thin-film GaInP/AlGaInP light-emitting diodes operating at a wavelength of 650 nm are presented, Unencapsulated devices reach an external quantum efficiency of 24%, which is further increased to 31% by encapsulation. The optical output power is 4mW at a current of 7mA.
URI: 
ISSN: 0013-5194
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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