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Title: Low-temperature deposition of Co on Cu(111): effects on step etching
Authors: Speller, S ×
Degroote, Stefan
Dekoster, J
Langouche, Guido
Ortega, JE
Narmann, A #
Issue Date: May-1998
Publisher: Elsevier science bv
Series Title: Surface science vol:405 issue:2-3 pages:L542-L548
Abstract: During growth of submonolayer films of Co on Cu(111) at 280 K, the surface is damaged by etching, leading to an increase in the interfacial mixing and roughness. Bq means of a quantitative STM study, we analyze the influence of the temperature of the substrate on this etching. Our results for 18 ML of Co indicate that the etching rate is considerably reduced by lowering the substrate temperature to 140 K during Co deposition only, The total etched area observed after annealing the film to 300 K can be reduced by a factor of five, although the etching process continues at a much loa er rate. From the quantification of both the etched area and the Cu content within terrace islands, we argue that the etching is basically due to the diffusion of Cu atoms out of the step-edges. Such a diffusion process, which is significantly diminished at low temperature, takes place at the early stages of the growth, i.e. during Co aggregation and island formation. (C) 1998 Elsevier Science B.V. All rights reserved.
URI: 
ISSN: 0039-6028
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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