Journal of physics-condensed matter vol:10 issue:1 pages:L19-L25
The electrical activity of the electron-spin-resonance-active interfacial point defects P-b0 and P-b1 (unpaired Si bonds) has been examined on standard thermal (100)Si/SiO2. After elimination of the H-passivation factor, this has been achieved through combination of electrical and ESR analysis on common suites of samples exhibiting a distinct controlled variation, both relatively and absolutely, of the P-b0 and P-b1 densities. Unlike initial inference, it is found that P-b1 is electrically inactive as a degrading interface state; hence it has no direct electrical influence in Si/SiO2-based device physics. All P-b0 defects, however, are found to be electrically active, putting these EPR-active defects in a unique position.