Title: Undetectability of the P-b1 point defect as an interface state in thermal (100)Si/SiO2
Authors: Stesmans, Andre
Afanas'ev, Valeri #
Issue Date: Jan-1998
Publisher: Iop publishing ltd
Series Title: Journal of physics-condensed matter vol:10 issue:1 pages:L19-L25
Abstract: The electrical activity of the electron-spin-resonance-active interfacial point defects P-b0 and P-b1 (unpaired Si bonds) has been examined on standard thermal (100)Si/SiO2. After elimination of the H-passivation factor, this has been achieved through combination of electrical and ESR analysis on common suites of samples exhibiting a distinct controlled variation, both relatively and absolutely, of the P-b0 and P-b1 densities. Unlike initial inference, it is found that P-b1 is electrically inactive as a degrading interface state; hence it has no direct electrical influence in Si/SiO2-based device physics. All P-b0 defects, however, are found to be electrically active, putting these EPR-active defects in a unique position.
ISSN: 0953-8984
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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