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Title: Growth and characterization of low-temperature grown GaN with high Fe doping
Authors: Akinaga, H
Nemeth, S
De Boeck, J
Nistor, L
Bender, H
Borghs, Gustaaf
Ofuchi, H
Oshima, M #
Issue Date: Dec-2000
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:77 issue:26 pages:4377-4379
Abstract: We succeeded in growing highly Fe-doped GaN films by solid-source molecular beam epitaxy using an electron-cyclotron-resonance microwave nitrogen plasma. The substrate temperature was in the range of 380-520 degreesC. The samples were analyzed by x-ray diffraction and transmission electron microscopy, and showed hexagonal (wurtzite) or cubic (zincblende) structure or a mixture of both phases. The Fe concentration was on the order of 10(19) cm(-3) and extended x-ray absorption fine structure data show that the Fe is substituting the Ga in GaN. The magnetization measurements as a function of temperature reveal ferromagnetic properties below 100 K for the sample grown at the lowest temperature. (C) 2000 American Institute of Physics. [S0003- 6951(01)00601-5].
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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