Title: Ionisation and trapping of hydrogen at SiO2 interfaces
Authors: Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: Feb-1999
Publisher: Elsevier science sa
Series Title: Materials science and engineering b-solid state materials for advanced technology vol:58 issue:1-2 pages:56-59
Abstract: Annealing of interfaces between SiO2 and (111)Si, (100)Si in H-2 in the temperature range 450-800 degrees C is found to introduce a considerable density (up to 10(13) cm(-2)) of positively charged centres. There is no comparable density of dangling bonds initially present nor generated during the annealing at the Si/SiO2 interfaces or in the SiO2 layer that could account for the observed hydrogen bonding. Therefore, the hydrogen is suggested to be trapped in the positively charged valence alternation state 3-fold coordinated oxygen resembling the well known hydronium ion (H3O)(+). (C) 1999 Elsevier Science S.A. All rights reserved.
ISSN: 0921-5107
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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