Title: Formation of (Nd,Y)-silicides by sequential channeled implantation of Y and Nd ions
Authors: Jin, S ×
Bender, Hugo
Wu, Ming Fang
Vantomme, André
Langouche, Guido #
Issue Date: Mar-2000
Publisher: Elsevier science bv
Series Title: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms vol:160 issue:3 pages:349-354
Abstract: A buried hexagonal Nd0.32Y0.68Si1.7 layer is formed by a sequential implantation of Y and Nd ions into (111)-oriented silicon wafers, The orientation relationship between the epitaxial Nd0.32Y0.68Si1.7 and the silicon is (0001)Nd0.32Y0.68Si1.7//(111)(Si) with (11 (2) over bar 0)Nd0.32Y0.68Si1.7//(1 (1) over bar 0)(Si). High temperature annealing (1000 degrees C) results in a gradual transition into an orthorhombic ternary (Nd,Y)-silicide. Between the orthorhombic (Nd,Y)-silicide and the Si a preferential orientation relationship exists: (110)(orth)//(1 (1) over bar 0)(Si) with (001)(orth)//(111)(Si). However, as not all orthorhombic silicide grains follow this epitaxial relationship, the minimum yield in the Rutherford backscattering spectrometry (RBS) spectrum increases compared to the results after a low temperature annealing, (C) 2000 Elsevier Science B.V. All rights reserved.
ISSN: 0168-583X
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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