Probing nitride thin films in 3-dimensions using a variable energy electron beam
Trager-Cowan, C McColl, D Sweeney, F Grimson, STF Treguer, JF Mohammed, A Middleton, PG Manson-Smith, SK O'Donnell, KP Van der Stricht, W Moerman, I Demeester, P Wu, MF Vantomme, André Zubia, D Hersee, SD #
Materials research society
MRS internet journal of nitride semiconductor research vol:5 Suppl. 1 pages:W5.10
In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD patterns obtained from two silicon-doped 3 mum thick GaN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire substrate misoriented by 10 degrees toward the m-plane (10 (1) over bar0).