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Title: Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors
Authors: Derluyn, J
Dessein, K
Flamand, G
Mols, Yves
Poortmans, J
Borghs, Gustaaf
Moerman, I #
Issue Date: Jan-2003
Publisher: Elsevier science bv
Series Title: Journal of Crystal Growth vol:247 issue:3-4 pages:237-244
Abstract: We have investigated the influence of substrate type (GaAs vs. germanium) and of group-V precursor (AsH3 vs. TBAs) on the epitaxial quality of (In)(AI)GaAs layers. We evaluated these layers in terms of morphology, background contamination and doping characteristics. For final benchmarking of the individually optimised processes, we produced p-on-n single junction GaAs solar cells and compared their relative performance. This type of device is an excellent performance monitor for epitaxial layers as the fundamental operating mechanism is drift of minority carriers. The solar cell grown with TBAs on a germanium-substrate has a conversion efficiency under the AM1.5 solar spectrum, which compares favourably with the highest reported value for a p-on-n GaAs solar cell on Ge (Prog. Photovolt. Res. Appl. 8 (2000) 377). (C) 2002 Elsevier Science B.V. All rights reserved.
ISSN: 0022-0248
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Physics and Astronomy - miscellaneous
# (joint) last author

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