Title: Optical and structural analysis of bulk ZnO samples undoped and rare earth doped by ion implantation
Authors: Monteiro, T ×
Neves, AJ
Carmo, MC
Soares, MJ
Peres, M
Alves, E
Rita, E
Wahl, Ulrich #
Issue Date: Jan-2006
Publisher: Academic Press
Series Title: Superlattices and Microstructures vol:39 issue:1-4 pages:202-210
Abstract: ZnO, with its high energy bandgap of similar to 3.3 eV, has been in the last years one of the most studied materials. The main driving force of the research performed in this oxide semiconductor is directly related to the ability and potentialities of ZnO for optoelectronic and spintronic applications. In the domain of optoelectronics, short wavelength light emitting devices are amongst the most important devices of compound semiconductors. Rare earth (RE) doping appears as an alternative route to photonic applications. In this work we discuss the role of defects in optical activation and structural properties of ion implanted RE doped ZnO single crystals. (C) 2005 Elsevier Ltd. All rights reserved.
ISSN: 0749-6036
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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