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Title: High-performance algaas/ingaas pseudomorphic hemts after epitaxial lift-off
Authors: Baeyens, Y
Brys, C
Deboeck, J
Deraedt, W
Nauwelaers, Bart
Borghs, Gustaaf
Demeester, P
Van Rossum, Marc #
Issue Date: 1995
Publisher: Iop publishing ltd
Host Document: Compound semiconductors 1994 issue:141 pages:689-692
Abstract: GaAs pseudomorphic HEMTs with a gatelength of 0.25 mu m were lifted-off from the GaAs substrate and attached to a MgO-substrate. Only minor differences were observed in the DC and RF characteristics before and after the epitaxial lift-off (ELO). A high extrinsic transition frequency (95 GHz) and a slightly higher microwave gain (MAG=16dB @ 12GHz) were measured after transplantation. Also typical noise characteristics were measured (NFmin=0.9dB @ 12 GHz), indicating that the high frequency noise was not affected by the ELO.
ISSN: 0951-3248
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Physics and Astronomy - miscellaneous
ESAT- TELEMIC, Telecommunications and Microwaves
# (joint) last author

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