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Title: Ion beam synthesis of heteroepitaxial erbium silicide layers
Authors: Wu, MF ×
Vantomme, André
Pattyn, Hugo
Langouche, Guido
Bender, H #
Issue Date: Aug-1996
Publisher: Elsevier science bv
Series Title: Applied surface science vol:102 pages:184-188
Abstract: Si(111) substrates were implanted with 70 or 90 keV Er-166 atoms to doses from 1.3 to 2.0 x 10(17) cm(-2) at substrate temperatures from 450 to 530 degrees C. During implantation, the Si substrates were tilted by 7 degrees to minimize the channeling effect. The Er silicide layers formed under these conditions are not as good as Co silicide layers formed by Co implantation under similar conditions and the reason is discussed, One of the best results is an annealed sample containing a discontinuous epitaxial ErSi1.7 layer with chi(min) of 40%. Rutherford backscattering and channeling spectrometry, X-ray diffraction and transmission electron microscopy have been used to study this heteroepitaxial ErSi1.7 layer, showing that the epilayer is compressively strained and the azimuthal orientation of the epilayer is ErSi1.7[0001]\\Si[111] and ErSi1.7<(10(1)over bar 0)>\\Si(<(11)over bar 2>).
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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