Title: Si-29 hyperfine structure of the P-b1 interface defect in thermal (100)Si/SiO2
Authors: Stesmans, Andre
Nouwen, Bert
Afanas'ev, Valeri #
Issue Date: Jul-1998
Publisher: Iop publishing ltd
Series Title: Journal of physics-condensed matter vol:10 issue:27 pages:L465-L472
Abstract: The observation of the electron spin resonance hyperfine (hf) spectra associated with the unpaired electron of the For interface defect in thermal (100)Si/SiO2 shows that the dominant interaction arises from a single Si-29 isotope. The hf tensor displays weakly monoclinic I (nearly axial) symmetry, with the principal axes of the g and hf tensors coinciding. A molecular orbital analysis indicates that the unpaired electron resides for similar to 58% in a single unpaired Si hybrid orbital, found to be 14% s-like and 86% p-like, with the p-orbital markedly pointing closely along a [211] direction at 35.26 degrees with the [100] interface normal. With oxygen not constituting an immediate part of the defect, the results firmly establish the key part of the P-b1 defect as a tilted (similar to 20 degrees about [011]) Si-3=Si unit.
ISSN: 0953-8984
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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