Title: Optical contrast formation in a-si1-xcx-h films by ion-implantation
Authors: Tsvetkova, T
Tzenov, N
Tzolov, M
Dimovamalinovska, D
Adriaenssens, Guy
Pattyn, Hugo
Lauwerens, W
Issue Date: Dec-1993
Publisher: Elsevier science bv
Series Title: Journal of non-crystalline solids vol:166 pages:897-900
Abstract: The formation of optical contrast in a-Si1-xCx:H alloy films by ion implantation with Ar and group IV elements has been investigated. The increased disorder and additional chemical modification of a-Si1-xCx:H, induced by the implantation of Ge or Sn, results in a considerable change of the optical properties. Darkening of the implanted films, demonstrated by absorption edge shift to the lower photon energies, has been registered, varying with the dose, implanted element and alloy composition. The accompanying change in the optical gap and absorption coefficient has been derived from the transmission, reflection and PDS (photodeflection spectroscopy) measurements.
ISSN: 0022-3093
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Semiconductor Physics Section
Nuclear and Radiation Physics Section

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