Jahn, SG × Wahl, Ulrich Restle, M Quintel, H Hofsass, H Wienecke, M Trojahn, I #
Trans Tech Publications
Materials science forum vol:196- pages:315-319
The lattice sites of Li-8 atoms implanted in Zn-rich ZnSe single crystal in the temperature range 100 - 600 K were investigated in emission channelling measurements. Implantation below 210 K results in the occupation of mainly tetrahedral interstitial sites, while raising the temperature up to 260 K the fraction on substitutional lattice sites increases. We propose that the onset of interstitial Li diffusion and capture by Zn-vacancies is responsible for the lattice site change indicating a Li migration energy E(m) = 0.47-0.59 eV. Between 260 and 360 K the occupation of tetrahedral interstitial sites becomes again favourable which may be attributed to the interaction of Li-Za with other defects. Above 360 these complexes may dissociate while Li on substitutional sites is still stable. Presently, above 450 K the dissociation of substitutional Li leads to its diffusion to extended defect complexes such as precipitations or dislocations. We estimate an activation energy of 1.33 eV for this process.