Title: Lattice sites of ion implanted Li in Zn-rich ZnSe
Authors: Jahn, SG ×
Wahl, Ulrich
Restle, M
Quintel, H
Hofsass, H
Wienecke, M
Trojahn, I #
Issue Date: 1995
Publisher: Trans Tech Publications
Series Title: Materials science forum vol:196- pages:315-319
Abstract: The lattice sites of Li-8 atoms implanted in Zn-rich ZnSe single crystal in the temperature range 100 - 600 K were investigated in emission channelling measurements. Implantation below 210 K results in the occupation of mainly tetrahedral interstitial sites, while raising the temperature up to 260 K the fraction on substitutional lattice sites increases. We propose that the onset of interstitial Li diffusion and capture by Zn-vacancies is responsible for the lattice site change indicating a Li migration energy E(m) = 0.47-0.59 eV. Between 260 and 360 K the occupation of tetrahedral interstitial sites becomes again favourable which may be attributed to the interaction of Li-Za with other defects. Above 360 these complexes may dissociate while Li on substitutional sites is still stable. Presently, above 450 K the dissociation of substitutional Li leads to its diffusion to extended defect complexes such as precipitations or dislocations. We estimate an activation energy of 1.33 eV for this process.
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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