Title: Structural characterization of In1-xMnxAs and Ga1-xMnxAs epitaxial magnetic films grown by MBE on GaAs
Authors: Bender, H
VanEsch, A
VanRoy, W
Oesterholt, R
DeBoeck, J
Borghs, Gustaaf #
Issue Date: 1995
Publisher: Iop publishing ltd
Host Document: Microscopy of semiconducting materials 1995 vol:146 pages:293-296
Abstract: Epitaxial layers of In1-xMnxAs and Ga1-xMnxAs have been grown by molecular beam epitaxy (MBE) on (001) GaAs substrates at various temperatures and with different Mn concentrations. The structural properties of these layers were investigated by High Resolution Electron Microscopy (HREM) for the as-grown layers and for different subsequent anneal. Several types of orientation relationships between the MnAs and In1-xMnxAs or Ga1-xMnxAs films have been determined and will be discussed.
ISSN: 0951-3248
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science