Author:

Keywords:

gallium-arsenide, microstructure, model, gold, Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, GALLIUM-ARSENIDE, MICROSTRUCTURE, MODEL, GOLD, 0401 Atmospheric Sciences, 0901 Aerospace Engineering, 0912 Materials Engineering, Applied Physics, 4016 Materials engineering, 5104 Condensed matter physics

Abstract:

Rutherford backscattering spectrometry and Auger electron spectroscopy are combined to study the interdiffusion behavior in alloyed Ni/Au/Te/Ni/GaAs ohmic contacts. The data are correlated to the results of electrical measurements to allow for a discrimination between the different ohmic contact models. Good ohmic behavior is found to coincide with the presence of a thin (congruent-to 200 angstrom) Te-rich (5-10 at. %) layer in the substrate surface layers. This result and the diffusion data on nonohmic behaving contacts can most consistently be interpreted in the frame of the graded crystalline and/or amorphous heterojunction model.