Title: Increase in oxide trap density due to the implementation of high-k and Al2O3 cap layers in thick-oxide input-output transistors for DRAM applications
Authors: Simoen, Eddy
Ritzenthaler, Romain
Cho, Moon Ju
Schram, Tom
Horiguchi, Naoto
Aoulaiche, Marc
Spessot, Alessio
Fazan, Pierre
Claeys, Cor
Issue Date: 2015
Publisher: ECS
Host Document: ULSI Process Integration IX pages:281-289
Conference: ULSI Process Integration IX location:Phoenix, AZ USA date:2015-10-11
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems

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