ISTFA 2015, 41st International Symposium for Testing and Failure Analysis, Date: 2015/11/01 - 2015/11/05, Location: Portland, OR, USA

Publication date: 2015-01-01
Volume: 2015-January Pages: 124 - 130
ISSN: 162708102X, 978-1-62708-102-3
Publisher: ASM International

41st International Symposium for Testing and Failure Analysis - ISTFA

Author:

De Wolf, Ingrid
Khaled, Ahmad Elsayed Esam ; Herms, Martin ; Wagner, Matthias ; Djuric, Tatjana ; Czurratis, Peter ; Brand, Sebastian

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Characterization & Testing, Physics, Applied, Engineering, Materials Science, Physics, RESIDUAL-STRESS

Abstract:

Copyright © 2015 ASM International® All rights reserved. This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs), used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz-SAM), which not only allows detection of defects like voids, cracks and delamination, but also the visualization of Rayleigh waves. GHz-SAM can provide information on voids, delamination and possibly stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress anisotropy in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.