Title: Growth and characterisation of mid-IR InAs0.9Sb0.1/InAs strained multiple quantum well light emitting diodes grown on InAs substrates
Authors: Grietens, B ×
Nemeth, S
Van Hoof, Chris
Van Daele, P
Borghs, Gustaaf #
Issue Date: Oct-1997
Publisher: Institution of Electrical Engineers
Series Title: IEE Proceedings. Optoelectronics vol:144 issue:5 pages:295-298
Abstract: Molecular beam epitaxy (MBE) has been used to grow strained multiple quantum well InAs0.9Sb0.1 light-emitting diodes (LEDs) lattice matched on InAs substrates. The LEDs exhibit room-temperature infrared emission at 3.4 mu m and can be used to fabricate low cost sensors for the detection or monitoring of any C-H containing compound. The compositional dependence of InAsSb on the As-2 over Sb-4 flux ratio has been examined and could be fitted using an empirical expression based on the As-2 and Sb-4 fluxes and on their relative sticking coefficients. Electroluminescence has been measured at room temperature and at liquid nitrogen temperature. The low temperature spectra peak at 3.4 mu m (InAs) and at 3.8 mu m (InAs0.9Sb0.1) At room temperature only InAs emission is observed. The external efficiencies at room temperature were 1.0 x 10(-4), and the maximum output power was 27.5 mu W under pulsed operation at 740mA (30kHz, 0.6% duty cycle).
ISSN: 1350-2433
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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