Molecular beam epitaxy (MBE) has been used to grow strained multiple quantum well InAs0.9Sb0.1 light-emitting diodes (LEDs) lattice matched on InAs substrates. The LEDs exhibit room-temperature infrared emission at 3.4 mu m and can be used to fabricate low cost sensors for the detection or monitoring of any C-H containing compound. The compositional dependence of InAsSb on the As-2 over Sb-4 flux ratio has been examined and could be fitted using an empirical expression based on the As-2 and Sb-4 fluxes and on their relative sticking coefficients. Electroluminescence has been measured at room temperature and at liquid nitrogen temperature. The low temperature spectra peak at 3.4 mu m (InAs) and at 3.8 mu m (InAs0.9Sb0.1) At room temperature only InAs emission is observed. The external efficiencies at room temperature were 1.0 x 10(-4), and the maximum output power was 27.5 mu W under pulsed operation at 740mA (30kHz, 0.6% duty cycle).