|ITEM METADATA RECORD
|Title: ||Electrical properties of phosphorus doped silicon layers obtained by ion-implantation through a passivating oxide|
|Authors: ||Verjans, J|
|Issue Date: ||1973 |
|Publisher: ||Pergamon-elsevier science ltd|
|Series Title: ||Solid-state electronics vol:16 issue:7 pages:779-785|
|Publication status: ||published|
|KU Leuven publication type: ||DI|
|Appears in Collections:||Nuclear and Radiation Physics Section|
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