ITEM METADATA RECORD
Title: Electrical properties of phosphorus doped silicon layers obtained by ion-implantation through a passivating oxide
Authors: Verjans, J
Pattyn, Hugo
Issue Date: 1973
Publisher: Pergamon-elsevier science ltd
Series Title: Solid-state electronics vol:16 issue:7 pages:779-785
URI: 
ISSN: 0038-1101
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Nuclear and Radiation Physics Section

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