Journal of Magnetism and Magnetic Materials vol:242 pages:489-491
We have grown epitaxial NiMnSb films on GaAs(111)A and (111)B by molecular beam epitaxy. Stoichiometric and Sb-rich films show the formation of MnSb and NiSb inclusions that can be interpreted as extended stacking faults, Sb-poor films are single-crystalline. A saturation magnetization as high as 700kA/m and coercive fields down to 0.7 mT indicate the good quality of the films. (C) 2002 Elsevier Science B.V. All rights reserved.