Title: Electron spin resonance study of the effect of applied stress during thermal oxidation of (111)Si on inherent Pb interface defects
Authors: Pierreux, D
Stesmans, Andre
Jaccodine, RJ
Lin, MT
Delph, TJ #
Issue Date: Apr-2004
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:72 issue:1-4 pages:76-80
Abstract: An electron spin resonance study has been carried out on the effect of in situ applied in-plane stress to (111)Si substrates during oxidation on the formation of inherent P-b (Si(3)equivalent toSi(.); Si dangling bond) interface defects in (111)Si/ SiO2. Analysis for various, both compressive and tensile, stress levels reveals the properties of these electrically active point defects to be significantly affected, in particular their incorporated inherent density and signal shape. Interestingly, the inherent P-b density is reduced by applied tensile stress, with an opposite result for compressive. The data support the commonly accepted relationship between inherent incorporation of the P-b defects and Si/SiO2 interface mismatch. (C) 2004 Elsevier B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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