Title: Oxygen-deficiency centers in SiO2 thermally nitrided in NO
Authors: Tello, PG
Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: Apr-2004
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:72 issue:1-4 pages:81-84
Abstract: Post-oxidation annealing (POA) of thermal Si/SiO2 in N-containing gases (NO, N2O, NH3) is known to provide numerous benefits for metal-oxide-semiconductor (MOS) devices by incorporating nitrogen at the Si/SiO2 interface. It was recently reported, however, that the nitrided oxides exhibit an enhanced density of holes traps. In the present study we analyze the nature of defects encountered in SiO2 after thermal treatment in pure NO addressing possible consequences related to their use in non-volatile semiconductor memory devices. (C) 2004 Elsevier B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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