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Title: Effect of low-temperature annealing on transport properties of Ga1-xMnxAs
Authors: Malfait, Mathieu
Vanacken, Johan
Van Roy, Willem
Primus, JL
De Boeck, J
Moshchalkov, Victor #
Issue Date: May-2004
Publisher: Elsevier science bv
Series Title: Journal of magnetism and magnetic materials vol:272 pages:1997-1998
Abstract: We have studied transport properties of the III-V-based diluted magnetic semiconductor Ga1-xMnxAs (x = 0.05) in order to determine the dependence of T-C and the conductivity sigma on the hole concentration p. The hole density is altered through post-growth annealing and determined by Hall measurements. By separating the measured Hall signal into ail anomalous and normal contribution taking the magnetoresistance into account, values for p are obtained even for samples with a relatively low Curie temperature T-C. (C) 2003 Elsevier B.V. All rights reserved.
ISSN: 0304-8853
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
# (joint) last author

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