Title: Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
Authors: Wu, Tian-Li
Marcon, Denis
You, Shuzhen
Posthuma, Niels
Bakeroot, Benoit
Stoffels, Steve
Van Hove, Marleen
Groeseneken, Guido
Decoutere, Stefaan
Issue Date: 2015
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Electron Device Letters vol:36 issue:10 pages:1001-1003
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors

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