Journal of Crystal Growth vol:194 issue:2 pages:189-194
A buried hexagonal YSi1.7 layer is formed by channelled implantation of Y ions into (1 1 1) oriented silicon wafers. The orientation relationship between the epitaxial YSi1.7 and the silicon is (0 0 0 1)(YSi1.7)parallel to(1 1 1)(Si) With [1 1 (2) over bar 0](YSi1.7)parallel to[1 (1) over bar 0)(Si). Annealing at 600 degrees C for 1 h and subsequently at 1000 degrees C for 0.5 h improves the crystalline quality of the buried YSi1.7 layer. On the other hand, Nd-disilicide cannot be grown epitaxially on a Si(1 1 1) substrate. However, by using a sequential implantation of Y and Nd ions, a buried hexagonal Nd0.32Y0.68Si1.7 layer with good crystalline quality is formed in the Sill 1 1) substrate. (C) 1998 Elsevier Science B.V. All rights reserved.