Title: Paramagnetic defects at the interface of ultrathin oxides grown under vacuum ultraviolet photon excitation on (111) and (100) Si
Authors: Stesmans, Andre
Afanas'ev, Valeri #
Issue Date: Sep-2000
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:77 issue:10 pages:1469-1471
Abstract: Electron-spin-resonance monitoring of Si dangling-bond-type interface defects is used to study ultrathin (similar to 20 Angstrom) Si-oxide films grown by vacuum ultraviolet (VUV)-enhanced oxidation of Si at 300 K. Large densities (up to similar to 9 x 10(12) cm(-2)) of P-b and P-b0 centers (interfacial Si-3=Si .) are observed in VUV-grown (111) and (100) Si/SiO2, respectively. As compared to standard thermal Si/SiO2, two major differences emerge: the VUV Si/SiO2 interface is under substantially enhanced stress, while no P-b1 defects are discerned in VUV (100) Si/SiO2. It is inferred that P-b1 generation requires a minimum amount of oxide relaxation. Microscopic understanding is provided for the known inferior electrical interface quality threatening low-thermal-budget oxide fabrication. (C) 2000 American Institute of Physics. [S0003-6951(00)00834-2].
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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