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Title: Vacancy-associated te sites in gaas
Authors: Wuyts, K ×
Langouche, Guido
Van Rossum, Marc
Silverans, Roger #
Issue Date: Mar-1992
Publisher: American physical soc
Series Title: Physical Review B vol:45 issue:11 pages:6297-6300
Abstract: Defect structures, observed by I-129 Mossbauer spectroscopy in high-dose Te-doped GaAs, are identified by a reference study of the semiconducting compound GaTe3. The formation of Te(As)-V(Ga) complexes (tellurium atoms quasisubstitutional on an As site with a gallium vacancy in the first-neighbor shell) is proposed, in agreement with theoretical predictions. The relevance of this assignment in relation to the earlier proposed Te DX configuration is also discussed.
ISSN: 0163-1829
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Physics and Astronomy - miscellaneous
Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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