Title: Ch4/h2 reactive ion etching for gate recessing of pseudomorphic modulation doped field-effect transistors
Authors: Pereira, R
Vanhove, M
Deraedt, W
Jansen, P
Borghs, Gustaaf
Jonckheere, R
Van Rossum, Marc #
Issue Date: Jul-1991
Publisher: Amer inst physics
Series Title: Journal of vacuum science & technology b vol:9 issue:4 pages:1978-1980
Abstract: Pseudomorphic AlGaAs/InGaAs modulation doped field effect transistors have been fabricated by using methane/hydrogen (CH4/H-2) reactive ion etching for gate recessing. Source-drain resistance and Hall measurements on as etched and annealed samples are presented. The electrical degradation introduced by the plasma can be recovered after annealing at 400-degrees-C. A threshold voltage (V(th)) standard deviation of 14 mV over a 5 cm (2 in.) wafer was obtained.
ISSN: 1071-1023
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science