European Conference on Radiation and Its Effects on Components and Systems (RADECS), Date: 2015/09/14 - 2015/09/18, Location: Moscow, Russia
Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Author:
Keywords:
Aerospace electronics Annealing Instruments Monitoring Radiation effects Sensors Temperature measurement, Science & Technology, Technology, Engineering, Electrical & Electronic, Nuclear Science & Technology, Engineering, CMOS, PTAT, temperature sensor, dynamic base leakage compensation, total ionizing dose, radiation-hardened
Abstract:
The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.