Title: Mossbauer studies with radioactive probes in semiconductors
Authors: Langouche, Guido # ×
Issue Date: 1994
Publisher: Baltzer sci publ bv
Series Title: Hyperfine Interactions vol:84 issue:1-4 pages:279-287
Abstract: The extreme sensitivity of Mossbauer spectroscopy to the local atomic and electronic configuration around Mossbauer probes is demonstrated in a number of recent defect configuration studies in semiconductors. The DX-center formation at Te and Sn donor atoms in GaAs is discussed, as well as the behavior of Co and Fe transition metal atoms in Si.
ISSN: 0304-3843
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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