Rita, E × Wahl, Ulrich Lopes, AML Araujo, JP Correia, JG Alvesa, E Soares, JC #
Physica B, Condensed Matter vol:340 pages:240-244
In this work we report on the lattice location of implanted Ag in ZnO single crystals, evaluated by means of the emission channeling technique. Following 60 keV low-dose (2 x 10(13) cm(-2)) ion implantation, the beta(-) emission patterns from Ag-111 were monitored with a position-sensitive detector as a function of annealing temperature up to 800degreesC in vacuum. Our experiments revealed that in the as-implanted state around 30% of the Ag atoms are substitutional at the Zn site with root mean square displacements around 0.17-0.28 Angstrom. Though this fraction did not change with increasing annealing temperature, upon annealing at 600degreesC the root mean square displacement of Ag from the Zn site increased considerably, followed by partial outdiffusion during 800degreesC annealing. (C) 2003 Elsevier B.V. All rights reserved.