ITEM METADATA RECORD
Title: Determination of interface energy band diagram between (100)Si and mixed Al-Hf oxides using internal electron photoemission
Authors: Afanas'ev, Valeri
Stesmans, Andre
Tsai, W #
Issue Date: Jan-2003
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:82 issue:2 pages:245-247
Abstract: Internal electron photoemission is used to investigate the electronic structure of the Si/Hf-Al oxide interfaces as a function of oxide composition. In the mixed oxides, the energy position and the density of states in the conduction band show little sensitivity to the Hf content. At the same time, the energy band diagram of the Si/oxide interface appears to be very close to that of the Si/Al2O3 interface, suggesting that the conduction band is derived mostly from the states of Al ions. (C) 2003 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science