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Title: On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C
Authors: Trauwaert, MA ×
Vanhellemont, J
Maes, HE
VanBavel, AM
Langouche, Guido
Stesmans, Andre
Clauws, P #
Issue Date: 1995
Publisher: Transtec publications ltd
Series Title: Icds-18 - proceedings of the 18th international conference on defects in semiconductors, pts 1-4 vol:196- pages:1147-1151
Abstract: Results are reported of a Deep Level Transient Spectroscopy (DLTS) study of the conversion of the divacancy related energy level at Ev+0.19eV, to a level at Ev+0.24eV after anneal at temperatures between 200 and 300 degrees C. In literature both levels have been associated with the donor level of the divacancy in silicon.
URI: 
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Semiconductor Physics Section
× corresponding author
# (joint) last author

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