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Title: Growth and properties of ion-beam synthesized Si/CoxNi1-xSi2/Si(111) structures
Authors: Wu, MF ×
Dewachter, J
Van Bavel, AM
Pattyn, Hugo
Langouche, Guido
Vanhellemont, J
Bender, H
Temst, Kristiaan
Wuyts, B
Bruynseraede, Yvan #
Issue Date: Jan-1994
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:75 issue:2 pages:1201-1203
Abstract: Heteroepitaxial CoxNi1-xSi2 layers with good crystalline quality (chi(min)=3.5%) have been formed by ion beam synthesis. For a sample with x=0.66, we found that this ternary silicide layer contains 11% type B and 89% type A orientation. The transmission electron microscopy investigation reveals that the type B component is mainly located at the interfaces and with a thickness of only a few monolayers. X-ray diffraction studies of the sample show that the strain of the type B component is smaller than that of the type A and is probably the reason for such a unique distribution of the type B component in the epilayer. Rutherford backscattering-channeling, Auger electron spectroscopy, transmission electronmicroscopy, and x-ray diffraction have been used in this study.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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