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Title: A combined x-ray-diffraction and raman analysis of ni/au/te-ohmic contacts to n-gaas
Authors: Wuyts, Jwk
Silverans, Roger
Vanhove, M
Van Rossum, Marc
Issue Date: Feb-1994
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:75 issue:4 pages:2055-2060
Abstract: The ohmic contact formation mechanism in furnace alloyed Ni/Au/Te/Au/GaAs structures is investigated by the combined application of x-ray diffraction and Raman spectroscopy. It was found that the Ni top layer promotes a more uniform dissociation of the GaAs substrate by the formation of a ternary Ni(x) GaAs phase in the initial stages of contact formation (T= 350-degrees-C). At an alloy temperature T=550-degrees-C, which induces low resistive electrical behavior, the formation of epitaxial Ga2Te3 was observed, indicating the formation of a Ga2Te3/GaAs heterojunction. After alloying at 600-degrees-C, Ga2Te3 Was still found to be present in the contact zone. In addition, evidence for a regrowth of GaAs crystallites could be derived from an increase of the intensity ratio I(TO)/I(LO) of the GaAs Raman signals. No indication for the presence of a high density of shallow donors (> 10(19) cm-3) in the GaAs top layers could be adduced.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Physics and Astronomy - miscellaneous
Solid State Physics and Magnetism Section

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